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SMMA511DJ
Vishay Siliconix
THERMAL RESISTANCE RATINGS
N-CHANNEL
P-CHANNEL
PARAMETER
SYMBOL
TYP.
MAX.
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient b, f
Maximum Junction-to-Case (Drain)
t ≤ 5s
Steady State
R thJA
R thJC
52
12.5
65
16
52
12.5
65
16
°C/W
Notes
a. Surface mounted on 1" x 1" FR4 board.
b. Package limit is ± 4.5 A.
c. t = 5 s.
d. See Solder Profile ( www.vishay.com/ppg?73257 ). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 110 °C/W.
SPECIFICATIONS T J = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
V GS(th) Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
V DS
Δ V DS /T J
Δ V GS(th) /T J
V GS(th)
I GSS
V GS = 0 V, I D = 250 μA
V GS = 0 V, I D = - 250 μA
I D = 250 μA
I D = - 250 μA
I D = 250 μA
I D = - 250 μA
V DS = V GS , I D = 250 μA
V DS = V GS , I D = - 250 μA
V DS = 0 V, V GS = ± 8 V
V GS = 0 V
V DS = 12 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
12
- 12
-
-
-
-
0.4
- 0.4
-
-
-
-
-
12
-7
- 2.8
2.1
-
-
-
-
-
-
-
-
-
-
-
1
-1
± 100
± 100
1
V
mV/°C
V
nA
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V
V GS = 0 V
V DS = - 12 V
V DS = 12 V, T J = 55 °C
P-Ch
N-Ch
-
-
-
-
-1
10
μA
V GS = 0 V
V DS = - 12 V, T J = 55 °C
P-Ch
-
-
- 10
On-State Drain Current a
I D(on)
V GS = 4.5 V
V GS = - 4.5 V
V DS ≥ 5 V
V DS ≤ - 5 V
N-Ch
P-Ch
15
-8
-
-
-
-
A
V GS = 4.5 V
V GS = - 4.5 V
I D = 4.2 A
I D = - 3.3 A
N-Ch
P-Ch
-
-
0.033
0.058
0.040
0.070
Drain-Source On-State Resistance a
R DS(on)
V GS = 2.5 V
V GS = - 2.5 V
I D = 3.8 A
I D = - 2.8 A
N-Ch
P-Ch
-
-
0.039
0.082
0.048
0.100
Ω
V GS = 1.8 V
V GS = - 1.8 V
I D = 1.6 A
I D = - 0.7 A
N-Ch
P-Ch
-
-
0.051
0.111
0.063
0.140
Forward Transconductance a
g fs
V DS = 10 V, I D = 4.2 A
V DS = - 10 V, I D = - 3.3 A
N-Ch
P-Ch
-
-
13
9
-
-
S
Dynamic b
Input Capacitance
C iss
N-Channel
N-Ch
P-Ch
-
-
400
400
-
-
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V GS = 0 V
V DS = 6 V, f = 1 MHz
P-Channel
V DS = - 6 V, f = 1 MHz
N-Ch
P-Ch
N-Ch
P-Ch
-
-
-
-
120
140
70
100
-
-
-
-
pF
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Document Number: 65281
S09-2019-Rev. B, 05-Oct-09
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